Virtual metrology enhanced plasma process optimization method

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United States of America Patent

PATENT NO 11869756
APP PUB NO 20220406580A1
SERIAL NO

17350439

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Abstract

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A method of optimizing a recipe for a plasma process includes (a) building a virtual metrology (VM) model that predicts a wafer characteristic resulting from the plasma process based on a plasma parameter and (b) building a control model that describes a relationship between the plasma parameter and a recipe parameter. (c) The wafer characteristic is measured after performing the plasma process according to the recipe. (d) Whether the wafer characteristic is within a predetermined range is determined. (e) The VM model and the control model are calibrated based on the wafer characteristic. (f) The recipe is optimized by updating the plasma parameter based on the wafer characteristic using the VM model and updating the recipe parameter based on the plasma parameter using the control model. (c), (d), (e) and (f) are repeated until the wafer characteristic is within the predetermined range.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDAKASAKA BIZ TOWER 3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kitao, Toshihiro Austin, US 6 0
Ranjan, Alok Austin, US 138 2096
Shinagawa, Jun Fremont, US 15 319
Suzuki, Atsushi Austin, US 542 5310
Wooley, Megan Austin, US 4 0

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