Semiconductor devices including fin shaped semiconductor regions and stress inducing layers
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United States of America Patent
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May 31, 2011
Grant Date -
Apr 7, 2011
app pub date -
Nov 19, 2010
filing date -
Jul 27, 2004
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Abstract
A semiconductor device may include a substrate, an active semiconductor region of the substrate, and a gate electrode. The active semiconductor region may include a channel region between first and second junction regions. The channel region may include a first semiconductor material, the first and second junction regions may include a second semiconductor material, and the first and second semiconductor materials may be different. The gate electrode may be on the channel region with portions of the first and second junction regions being free of the gate electrode.
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