Multi-composition dielectric for semiconductor device

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United States of America Patent

PATENT NO 8927359
SERIAL NO

13772616

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Abstract

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The present disclosure provides a method of semiconductor device fabrication including forming a multi-composition ILD layer by forming a first portion of an inter-layer dielectric (ILD) layer on a semiconductor substrate; and forming a second portion of an ILD layer on the first portion of the ILD layer. The second portion may have a greater silicon content than the first portion. For example, the second portion may be a silicon rich oxide.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chun-Yi Bade, TW 96 701
Fang, Ziwei Hsinchu, TW 181 2393
Lin, Ming-Feng Hsinchu, TW 16 76
Liu, Su-Hao Chiayi County, TW 82 800
Yu, Sheng-Wen New Taipei, TW 11 43

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