Semiconductor light-emitting device
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United States of America Patent
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Sep 14, 2010
Grant Date -
Nov 12, 2009
app pub date -
Dec 28, 2006
filing date -
Jan 16, 2006
priority date (Note) -
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Abstract
Disclosed is a semiconductor light-emitting device having improved light-extraction efficiency. Specifically disclosed is a semiconductor light-emitting device (1) comprising a semiconductor light-emitting element (10), a phosphor layer (11) which is so formed as to cover at least a part of the semiconductor light-emitting element (10), and an outer layer (12) which is so formed as to cover at least a part of the phosphor layer (11). The phosphor layer (11) contains a binder (17) and a phosphor (18) dispersed in the binder (17), and the outer layer (12) contains a porous material (19). Consequently, the semiconductor light-emitting device is improved in light-extraction efficiency.
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