Methods of forming integrated circuits devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate
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United States of America Patent
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Apr 17, 2007
Grant Date -
Nov 4, 2004
app pub date -
Apr 13, 2004
filing date -
Apr 30, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit region. A buried contact plug is provided on the integrated circuit substrate in the cell array region and a resistor is provided on the integrated circuit substrate in the peripheral circuit region. A first pad contact plug is provided on the buried contact plug in the cell array region and a second pad contact plug is provided on the resistor in the peripheral circuit region. An ohmic layer is provided between the first pad contact plug and the buried contact plug and between the second pad contact plug and the resistor. Related methods of fabricating integrated circuit devices are also provided.
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