Carrier confinement in light-emitting group IV semiconductor devices
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United States of America Patent
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Jul 24, 2007
Grant Date -
Nov 30, 2006
app pub date -
May 26, 2005
filing date -
May 26, 2005
priority date (Note) -
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Abstract
In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of local crystal modifications in the first Group IV semiconductor in an array. An array of local crystal modifications is formed in the first Group IV semiconductor in accordance with the pattern. The local crystal modifications induce overlapping strain fields that increase the bandgap of the first Group IV semiconductor, create an energy band barrier against transport of minority carriers across the first region. A second region that includes a second Group IV semiconductor that has a bandgap and is doped with a second dopant of a second electrical conductivity type opposite the first conductivity type is formed. Semiconductor devices formed in accordance with this method also are described.
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