Manufacturing method, including etch-rate monitoring
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United States of America Patent
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Nov 9, 1993
Grant Date -
N/A
app pub date -
Dec 31, 1991
filing date -
Dec 31, 1991
priority date (Note) -
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status (Latency Note)
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Abstract
A method is described for monitoring the rate at which metal layers are chemically etched. The method involves an indicator layer of metal formed on a surface of a monitor substrate. The thickness of the indicator layer varies according to a wedge-shaped profile along a longitudinal axis. The indicator layer is exposed to an etchant medium for a predetermined duration. During such exposure, a portion of the indicator layer is completely removed, exposing the underlying surface and creating an edge between the exposed surface and the remaining portion of the indicator layer. The etching rate is determined by reference to the longitudinal location of the edge.
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