Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memory
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United States of America Patent
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Sep 18, 2007
Grant Date -
Mar 15, 2007
app pub date -
Sep 9, 2005
filing date -
Sep 9, 2005
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Abstract
A method of fabricating a non-volatile memory is provided. In the fabricating method, a plurality of stack gate structures is formed on a substrate and a plurality of doped regions is formed in the substrate beside the stack gate structures. Then, a plurality of spacers is formed on the sidewalls of the stack gate structures. After that, a plurality of conductive pad layers is formed on the exposed doped regions. By forming the conductive pad layers, the resistance of the doped region in each memory cell can be reduced.
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