Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer
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United States of America Patent
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Mar 4, 2008
Grant Date -
Oct 27, 2005
app pub date -
Aug 2, 2004
filing date -
Apr 24, 2004
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Abstract
A method for forming a barrier layer upon a copper containing conductor layer employs a hydrogen containing plasma treatment of the copper containing conductor layer followed by an argon plasma treatment of the copper containing conductor layer. The barrier layer may be formed employing a chemical vapor deposition method, such as an atomic layer deposition method. When the deposition method employs a metal and carbon containing source material, the two-step plasma pretreatment provides the barrier layer with enhanced electrical properties.
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