Semiconductor device and method of manufacturing semiconductor device

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United States of America Patent

PATENT NO 11923203
APP PUB NO 20220367207A1
SERIAL NO

17875253

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Abstract

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A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuu, Chih-Piao Hsinchu, TW 8 8
Li, Lain-Jong Hsinchu, TW 81 795
Li, Ming-Yang Hsinchu, TW 20 21

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