Memory cell repair using fuse programming method in a flash memory device

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United States of America Patent

PATENT NO 7289363
APP PUB NO 20060262601A1
SERIAL NO

11132602

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for repairing cells of a flash memory array includes using a fuse memory array circuit. The fuse memory cells are initially programmed. The locations of defective memory cells of the main array are determined. These locations are stored in the fuse memory cells by erasing predetermined locations in the fuse memory cell array so that the locations are programmed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ha, Chang Wan San Ramon, CA 74 723

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