Resistance change memory having organic semiconductor layer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7205564
APP PUB NO 20050146955A1
SERIAL NO

10979327

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Abstract

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A resistance change memory includes a memory element, and a first organic semiconductor layer in contact with the memory element.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kajiyama, Takeshi Yokohama, JP 80 1661

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