Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
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United States of America Patent
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Jul 22, 2008
Grant Date -
Dec 21, 2006
app pub date -
Jun 16, 2005
filing date -
Jun 16, 2005
priority date (Note) -
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Abstract
A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300.degree. C. during fabrication.
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