Low leakage ROM architecture

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8031542
APP PUB NO 20110013444A1
SERIAL NO

12891806

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A Read only memory (ROM) with minimum leakage includes a ROM array including a first transistor, wherein a drain, a source, a gate, and a bulk of the first transistor is electrically connected to a logic zero in the idle state for ensuring zero junction and sub-threshold leakage current. The drain of the first transistor is electrically connected to a main bit line through a second transistor. The second transistor includes a gate, electrically connected to a first decoding circuit, a drain, electrically connected to the main bit line. A first reference bit line is electrically connected to a drain of a third transistor, wherein gate of the third transistor is electrically connected to a second decoding circuit for generating a stop read signal. A second reference bit line, electrically connected to the first decoding circuit through a first sensing unit for generating a stop pre-charge signal.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • SYNOPSYS, INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Khanuja, Amit New Delhi, IN 14 68
Sabharwal, Deepak Fremont, US 18 148
Sachan, Vineet Kumar Indirapuram, IN 3 3

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation