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Abstract

Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is .lamda., an index of refraction of the ZnO layer at the wavelength .lamda. is n.sub.z.lamda., and a total reflection angle at an interface between the ZnO layer and a medium in contact therewith is .theta..sub.z, a periodic interval L.sub.z between adjacent concave portions is set in a range of .lamda./n.sub.z.lamda..ltoreq.L.sub.z.ltoreq..lamda./(n.sub.z.lamda..time- s.(1-sin .theta..sub.z)).

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