Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof
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United States of America Patent
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Sep 11, 2007
Grant Date -
Jan 12, 2006
app pub date -
Jul 6, 2004
filing date -
Jul 6, 2004
priority date (Note) -
Expired
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Abstract
The method comprises forming barrier layers of Al.sub.xGa.sub.1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.
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