Method and apparatus for radiation assisted electrochemical etching and etched product
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United States of America Patent
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Sep 14, 2004
Grant Date -
N/A
app pub date -
Dec 11, 2001
filing date -
May 24, 2000
priority date (Note) -
Expired
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Abstract
An electrochemical etching system has an etching bath for holding an n-type silicon substrate with a first surface of the substrate in contact with hydrofluoric acid, an electrode positioned in the hydrofluoric acid, a power source having a positive pole connected to the silicon substrate and a negative pole connected to the electrode, and an illumination unit having a light source for illumination of a second surface of the silicon substrate. The illumination unit illuminates the second surface of the silicon substrate with an illumination intensity of 10 m W/cm.sup.2 or more. A ratio of a maximum illumination to a minimum illumination of the second surface of the silicon substrate is 1.69:1 or less. With the etching system, pores and/or trenches of a certain size and shape can be formed in an entire area of the silicon substrate having a diameter of more than three inches.
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