Semiconductor constructions, methods of forming conductive structures and methods of forming DRAM cells

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United States of America Patent

PATENT NO 9099472
APP PUB NO 20140048943A1
SERIAL NO

14063981

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Abstract

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Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Goodner, Duane M Boise, US 7 17
Goswami, Jaydeb Boise, US 31 112
Tsai, Hung Ming Boise, US 8 9

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