GaN structures having low dislocation density and methods of manufacture
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United States of America Patent
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Nov 9, 2004
Grant Date -
Mar 25, 2004
app pub date -
Sep 25, 2002
filing date -
Sep 25, 2002
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Abstract
Included in the invention are laminates having layers of group III-V materials having low dislocation densities, semiconductor devices fabricated using low dislocation density group III-V layers, and methods for making these structures. Some of the inventions are concerned with GaN layers, GaN semiconductor devices, and semiconductor lasers fabricated from GaN materials. Detailed information on various example embodiments of the inventions are provided in the Detailed Description below, and the inventions are defined by the appended claims.
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