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Abstract

A method of manufacturing a semiconductor device of the present invention consists of forming a trench in a trench-type cell transistor region; forming a gate insulating film and a gate material layer on a semiconductor substrate; forming a photoresist layer on the semiconductor substrate so as to expose extension region formation portions of the trench-type cell transistor region and a high breakdown voltage transistor region; forming extension regions in each region by performing ion implantation in the semiconductor substrate surface of the trench-type cell transistor region and the high breakdown voltage transistor region and then patterning gates, and forming extension regions of an ordinary breakdown voltage transistor by covering the trench-type cell transistor region and the high breakdown voltage transistor region with a photoresist layer and implanting ions in the ordinary breakdown voltage transistor region.

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First Claim