Electron beam etching device and method
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United States of America Patent
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Nov 16, 2010
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app pub date -
Aug 14, 2006
filing date -
Aug 14, 2006
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Abstract
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
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