Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)
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United States of America Patent
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Apr 7, 2009
Grant Date -
Jun 7, 2007
app pub date -
Feb 12, 2007
filing date -
May 31, 2001
priority date (Note) -
Expired
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Abstract
By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.
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