Method for evaluating HSG silicon film of semiconductor device by atomic force microscopy
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United States of America Patent
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Oct 19, 1999
Grant Date -
N/A
app pub date -
Jan 22, 1998
filing date -
Jan 22, 1998
priority date (Note) -
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Abstract
An evaluating method of an HSG silicon film using atomic force microscopy (AFM). The characteristics of the HSG silicon film are measured and expressed with quantitative values using AFM. The above values are compared to values written in the working specification, to thereby evaluate the HSG silicon film and control the conditions of forming the HSG silicon film. Also, the capacitor where the HSG silicon film is interposed is formed, and then the capacitance of the capacitor is measured to determine the HSG height of the HSG silicon film for ensuring desired capacitance and conditions of forming the HSG silicon film. Accordingly, the characteristics of the HSG silicon film may be analyzed without damaging the semiconductor substrate and a preferred working specification for forming the HSG silicon film may be realized, to thereby increase the reproducibility of the HSG silicon film. Also, when the conditions of forming the HSG silicon film are determined, it is checked whether the apparatus for forming the HSG silicon film operates normally.
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