Dummy metal fill shapes for improved reliability of hybrid oxide/low-k dielectrics
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United States of America Patent
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Feb 15, 2011
Grant Date -
Feb 5, 2009
app pub date -
Oct 22, 2008
filing date -
Apr 1, 2003
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Abstract
A semiconductor structure including a first rigid dielectric layer and a second rigid dielectric layer. A first non-rigid low-k dielectric layer is formed between the first and second rigid dielectric layer. A plurality of dummy fill shapes is formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone.
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