Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
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United States of America Patent
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Apr 6, 2004
Grant Date -
Aug 1, 2002
app pub date -
Mar 22, 2002
filing date -
Mar 29, 1996
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An inspection method and apparatus includes control of an acceleration voltage of an electron beam, irradiation of the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, and detection of at least one of secondary electrons and reflected electrons emanated from the object in response to the irradiation. An image of the object is obtained from the detected electron by using positional information of the stage and inspection or measurement of the object is conducted using an obtained image. In the detection, an electric field in the vicinity of the object mounted on the stage is controlled so that at least one of the secondary electrons and the reflected electrons emanated from the object in response to the irradiation of the electron beam are decelerated.
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