Method of fabricating crystalline silicon ingot including nucleation promotion layer
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United States of America Patent
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Nov 15, 2016
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app pub date -
Mar 9, 2012
filing date -
Nov 28, 2011
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Abstract
A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.
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