Vertical semiconductor device and fabrication method thereof

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United States of America Patent

PATENT NO 11917820
APP PUB NO 20210335800A1
SERIAL NO

17368630

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Abstract

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A method for fabricating semiconductor device includes forming an alternating stack that includes a lower multi-layered stack and an upper multi-layered stack by alternately stacking a dielectric layer and a sacrificial layer over a substrate, forming a vertical trench that divides the upper multi-layered stack into dummy stacks, and forming an asymmetric stepped trench that is extended downward from the vertical trench to divide the lower multi-layered stack into a pad stack and a dummy pad stack, wherein forming the asymmetric stepped trench includes forming a first stepped sidewall that is defined at an edge of the pad stack, and forming a second stepped sidewall that is defined at an edge of the dummy pad stack and occupies less area than the first stepped sidewall.

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Patent Owner(s)

  • SK HYNIX, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jung, Eun-Joo Icheon, KR 5 19
Kim, Eun-Ho Suwon, KR 13 44
Lee, Sung-Hoon Icheon, KR 71 640
Yoo, Jong-Hyun Suwon, KR 3 5
Yun, Ki-Jun Yongin, KR 15 18

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