Integrated circuit memory and manufacturing method thereof, and semiconductor integrated circuit device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11862723
SERIAL NO

17389898

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A manufacturing method of an integrated circuit memory includes: a substrate is provided; a bit line extending along a first direction is formed on the substrate; a word line extending along a second direction is formed on the bit line; and a vertical storage transistor is formed in an overlapping region where the word line and the bit line are spatially intersected, the vertical storage transistor being located on the bit line, and connected to the bit line.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
CHANGXIN MEMORY TECHNOLOGIES INCHEFEI CITY ANHUI 230000

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Luo, Qu Hefei, CN 5 1

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
3.5 Year Payment $1600.00 $800.00 $400.00 Jul 2, 2027
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 2, 2031
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 2, 2035
Fee Large entity fee small entity fee micro entity fee
Surcharge - 3.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00