Manufacturing method of SOI substrate
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United States of America Patent
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Jul 8, 2014
Grant Date -
Feb 28, 2013
app pub date -
Aug 20, 2012
filing date -
Aug 23, 2011
priority date (Note) -
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Abstract
In order to keep the crystallinity of the semiconductor thin film layer high, a temperature of a semiconductor substrate during hydrogen ion addition treatment is suppressed to lower than or equal to 200° C. In addition, the semiconductor substrate is subjected to plasma treatment while the semiconductor substrate is kept at a temperature of higher than or equal to 100° C. and lower than or equal to 400° C. after the hydrogen ion addition treatment, whereby Si—H bonds which have low contribution to separation of the semiconductor thin film layer can be reduced while Si—H bonds which have high contribution to separation of the semiconductor thin film layer, which are generated by the hydrogen ion addition treatment, are kept.
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