Dispersion of nanowires of semiconductor material
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United States of America Patent
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Apr 15, 2008
Grant Date -
Jul 27, 2006
app pub date -
Nov 6, 2003
filing date -
Nov 18, 2002
priority date (Note) -
Expired
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Abstract
A method of manufacturing nanowires (104) is provided, according to which method the nanowires are prepared by anodic etching a semiconductor substrate (10) with an alternating current density, so as to create first regions (4) and second regions (5) with different diameters. Thereafter, the diameters are reduced by preferably repeated oxidation and etching. Finally, the nanowires (104) are dispersed in a dispersion by ultrasonic vibration, through which the coupled nanowires split into individual nanowires of substantially uniform length. The nanowires may then be provided with a surface layer of a suitable material, for instance a luminescent material.
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