Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography
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United States of America Patent
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Mar 5, 2002
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app pub date -
Jan 19, 2000
filing date -
Jan 19, 2000
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Abstract
Mesoscopic magnetic field sensors which can detect weak magnetic fields (typically 0.05 Tesla) over areas as small as tens of thousands of square nanometers (e.g. 40 nm.times.400 nm). The combination of enhanced magneto-resistance in an inhomogeneous high mobility semiconductor, having special electrode arrangements, with the use of island lithography, enables the production of special semiconductor/metal nano-composite structures, and has made possible the fabrication of an entirely new type of magnetic field sensor which exhibits very superior magneto-resistive behavior.
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