Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof
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United States of America Patent
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Oct 21, 2003
Grant Date -
Jun 6, 2002
app pub date -
Aug 13, 2001
filing date -
Jan 28, 1998
priority date (Note) -
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Abstract
The present invention is related to a metallization structure on a fluorine-containing dielectric. This metallization structure includes a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt, and Pd. The barrier layer includes at least a first part, being positioned between the fluorine-containing dielectric and the conductive pattern, the first part containing at least a first and a second sub-layer, the first sub-layer contacting the fluorine-containing dielectric being impermeable for fluorine.
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