Solid state devices having fine pitch structures

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United States of America Patent

PATENT NO 9437657
APP PUB NO 20150155336A1
SERIAL NO

14616128

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In various embodiments, a method for forming a memory array includes forming a plurality of rows and columns of hardmask material, etching holes in the one or more layers of insulating material using the combined masking properties of the rows of hardmask material and the columns of hardmask material, and forming memory cells in the holes. The corners of the holes can be rounded.

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Patent Owner(s)

  • HGST, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shepard, Daniel R North Hampton, US 61 624

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