Semiconductor method and device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11854901
APP PUB NO 20220328358A1
SERIAL NO

17843694

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Abstract

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A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jung-Jen Hsinchu, TW 9 7
Chen, Kei-Wei Tainan, TW 224 1021
Jeng, Pei-Ren Chu-Bei, TW 107 2037
Li, Chii-Horng Zhubei, TW 154 848
Ma, Ta-Chun New Taipei, TW 18 124
Su, Chien-Chang Kaohsiung, TW 54 2003
Yen, Cheng-Hsiung Zhubei, TW 13 19

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