Semiconductor device and method of manufacturing the same
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United States of America Patent
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Feb 6, 2007
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N/A
app pub date -
Nov 5, 2004
filing date -
Jul 31, 2000
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Abstract
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
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