Method for evaluating an epitaxial wafer for a light emitting device, recording medium readable by a computer and epitaxial wafer for a light emitting device
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United States of America Patent
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Apr 16, 2002
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N/A
app pub date -
Sep 14, 1999
filing date -
Sep 17, 1998
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Abstract
An evaluating method capable of quickly measuring the essential lifetime in an epitaxial wafer for a light emitting device independently from the excited carrier density without breaking the epitaxial wafer is configured to obtain the non-radiative lifetime from the changing rate of intensity of luminescence light generated by irradiating exited light onto the epitaxial wafer at the time when the changes with time becomes below a given value, and to obtain the non-radiative lifetime independent from the excited carrier density. An epitaxial wafer for a light emitting device with a higher emission efficiency than conventional ones has a non-radiative lifetime not shorter than 20 nanoseconds obtained by the evaluating method, and the diffusion amount of zinc into its active layer does not exceed 1E13 atoms per cm.sup.2.
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