Semi-conductor device with inductive component and method of making
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United States of America Patent
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Nov 18, 2008
Grant Date -
Jun 28, 2007
app pub date -
Mar 8, 2007
filing date -
Aug 1, 2001
priority date (Note) -
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Abstract
An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).
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