Method of manufacturing semiconductor device
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United States of America Patent
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Oct 26, 2004
Grant Date -
Feb 27, 2003
app pub date -
Jul 30, 2002
filing date -
Jul 31, 2001
priority date (Note) -
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Abstract
Improving a film quality of a metal film formed by the CVD method, for example, an Ru film or the like constituting a lower electrode of a data storage capacitor. More specifically, the Ru film to be the lower electrode of the data storage capacitor is formed on a sidewall and a bottom surface of a hole in a silicon oxide film on which the data storage capacitor is formed, by the CVD method using H.sub.2 O as a catalyst and Ru(ACAC)(TMVS).sub.2 [ACAC: acetylacetonate (CH.sub.3 COCHCOCH.sub.3).sup.-, TMVS: trimetylvinylsilane (CH.sub.2 CHSi(CH.sub.3).sub.3)] which is a one-valence Ru compound, as a material. As a result, by generating zero-valence Ru and Ru(ACAC).sub.3 containing three-valence Ru, the Ru film is formed. Therefore, if the Ru film is formed by the CVD method utilizing the disproportionate reaction, the film quality of the Ru film can be improved. Also, it is possible to prevent conductive films and the like located below the Ru film from oxidizing.
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