Semiconductor device, method for manufacturing the same, apparatus for manufacturing the same
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United States of America Patent
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Nov 9, 1999
Grant Date -
N/A
app pub date -
Oct 1, 1996
filing date -
Oct 3, 1995
priority date (Note) -
Expired
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Abstract
A method of manufacturing the semiconductor device comprises elements described below; (a) forming a wiring pattern on an insulating film on a semiconductor substrate, (b) forming a reflow SiO.sub.2 film having a reflow shape by introducing SiH.sub.4 gas and H.sub.2 O.sub.2 gas into a reaction chamber which accommodates said semiconductor substrate and mutually reacting the SiH.sub.4 and H.sub.2 O.sub.2 gases in a temperature range of about -10.degree. C. to about +10.degree. C. in a vacuum of about 665 Pa or below, (c) plasma treating a surface of said reflow SiO.sub.2 film by introducing a gas including fluorine into said reaction chamber and discharging plasma in said reaction chamber, and (d) heat treating said semiconductor substrate.
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