SiC material, semiconductor device fabricating system and SiC material forming method
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United States of America Patent
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Aug 12, 2008
Grant Date -
Jan 19, 2006
app pub date -
Jun 17, 2005
filing date -
Aug 2, 1999
priority date (Note) -
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Abstract
A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains .beta.-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of the .beta.-Sic csystals to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes Of the .beta.-SiC crystals is 0.15 or above. The SiC material may contain both .beta.-SiC crystals and .alpha.-SiC crystals of 6H structure. A base body with a SiC material by a CVD process is used as an internal component member of a semiconductor device fabricating system.
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