Bottom conductor for integrated MRAM
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 4, 2007
Grant Date -
Mar 1, 2007
app pub date -
Aug 30, 2005
filing date -
Aug 30, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A structure that is well suited to connecting an MTJ device to a CMOS integrated circuit is described. It is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum. A method for its formation is also described.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully