Dual-RIE structure for via/line interconnections
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United States of America Patent
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Aug 13, 2002
Grant Date -
N/A
app pub date -
May 26, 1999
filing date -
May 26, 1999
priority date (Note) -
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Abstract
A structure and process to define a via/interconnect structure is described. The structure is formed by reactive ion etching (RIE) where vias are formed first then the interconnects. The disclosed method relies on first depositing a metal with a thickness equivalent to the total height of the via and interconnect. Once vias are delineated by forming a hard mask and lithography, the lines are patterned using a lithographic step. Vias and lines are formed using lithography and RIE in one step and interfacial integrity is maintained resulting in high electromigration performance.
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