Semiconductor device structure with metal gate stack

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United States of America Patent

PATENT NO 11929413
APP PUB NO 20220359695A1
SERIAL NO

17871528

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Abstract

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A semiconductor device structure is provided. The semiconductor device structure includes a first channel structure and a second channel structure over a substrate. The semiconductor device structure also includes a first gate stack over the first channel structure, and the first gate stack has a first width. The semiconductor device structure further includes a second gate stack over the second channel structure. The second gate stack has a protruding portion extending away from the second channel structures. The protruding portion of the second gate stack has a second width, and half of the first width is greater than the second width.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiang, Kuo-Cheng Zhubei, TW 397 310
Su, Huan-Chieh Changhua County, TW 163 140
Wang, Chih-Hao Baoshan Township, TW 1026 6990
You, Jia-Chuan Taoyuan County, TW 98 199

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