Gate and CMOS structure and MOS structure
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United States of America Patent
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Aug 15, 2006
Grant Date -
Jun 3, 2004
app pub date -
Mar 1, 2002
filing date -
Mar 2, 2001
priority date (Note) -
Expired
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Abstract
Provided are a novel gate, a CMOS structure, and a MOS structure each of that has low resistance and excellent controllability. The gate is comprised of an intermetallic compound semiconductor that has an electric conductivity in a range of no less than 10.sup.2 Sm.sup.-1, nor more than 10.sup.5 Sm.sup.-1 without impurities and has a band structure like that of a semiconductor.
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