Solid state image sensor
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United States of America Patent
Stats
-
Apr 26, 1983
Grant Date -
N/A
app pub date -
Dec 12, 1980
filing date -
Dec 21, 1979
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A MOSFET consisting of a source region, a drain region and a gate layer is formed on a p-type semiconductor substrate. Field insulation layers are formed to surround the MOSFET, and conductive electrodes are formed thereover. A photosensing layer is overlayed on this structure. This photosensing layer is made of an amorphous chalcogen glass semiconductor material, for example Se-As-Te, and is in contact with the source region through an opening. A charge packet generated within the photosensing layer is transferred to the source region by an electric field induced when a voltage is applied to the conductive electrodes.
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