Nitride semiconductor laser
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United States of America Patent
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Nov 14, 2006
Grant Date -
Aug 4, 2005
app pub date -
Mar 25, 2005
filing date -
Jun 5, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.
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