Technique for providing stress sources in MOS transistors in close proximity to a channel region
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United States of America Patent
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Mar 31, 2009
Grant Date -
Oct 4, 2007
app pub date -
Nov 13, 2006
filing date -
Mar 31, 2006
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Abstract
A strained semiconductor material may be positioned in close proximity to the channel region of a transistor, such as an SOI transistor, while reducing or avoiding undue relaxation effects of metal silicides and extension implantations, thereby providing enhanced efficiency for the strain generation.
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