Film-forming method, method of manufacturing semiconductor device, semiconductor device, method of manufacturing display device, and display device
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United States of America Patent
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Dec 11, 2007
Grant Date -
Oct 21, 2004
app pub date -
Apr 12, 2004
filing date -
Apr 18, 2003
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%.ltoreq.Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.
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