Writing multiple levels in a phase change memory

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United States of America Patent

PATENT NO 10998045
SERIAL NO

16679762

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Abstract

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Structures and methods for a multi-bit phase change memory are provided herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lam, Chung H Peekskill, US 257 3514
Lewis, Scott C Essex Junction, US 51 1328
Maffitt, Thomas M Burlington, US 35 352
Morrish, Jack Shelburne, US 11 15

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