Semiconductor device including different nitride regions improving characteristics of the semiconductor device

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United States of America

PATENT NO 11967641
APP PUB NO 20230268430A1
SERIAL NO

18307099

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Abstract

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According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1−x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1−x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1−x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA; TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kajiwara, Yosuke Yokohama, JP 47 106
Kato, Daimotsu Kawasaki, JP 45 115
Kuraguchi, Masahiko Yokohama, JP 93 725
Mukai, Akira Kawasaki, JP 29 63
Ono, Hiroshi Setagaya, JP 369 4172
Shindome, Aya Yokohama, JP 26 18

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